![]() Since then, the simultaneous temporal-spatial mode of two-color IR photodetectors has been a popular research topic and has been successfully implemented in HgCdTe (MCT) 10, quantum wells 11, type II superlattices 12 and so on. In 1980, a structure based on a back-to-back concept with three electrodes was designed 8 to solve the problem of spatial coexcitation, but this strategy results in poor temporal coherence during sequential detection, which makes it very difficult to detect a moving target 9. Early techniques for obtaining the information from two bands involved a photodetector unit composed of multiple pixels with different response spectra in the plane, but poor spatial consistency led to aberrations in imaging. ![]() As this technology has been developed, the main research direction has become the integration of two-color detection into single pixels without complex optical components 6 while solving the core problem of separating and detecting dual spectral information independently 7. Two-color infrared (IR) technology can identify targets in a complex environment by using the multispectral features of targets, and this technique has been widely used in information technology, life sciences, aerospace, and other fields 1, 2, 3, 4, 5. ![]() The impressive performance of the two-color photodetector is verified by the specific detectivity ( D*) of 6.4 × 10 9 cm Hz 1/2 W −1 at 3.5 μm and room temperature, as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection. The two-color signals can be effectively separated to achieve ultralow crosstalk of ~0.05% by controlling the built-in electric field depending on the intermediate layer, which acts as an electron-collecting layer and hole-blocking barrier. This photodetector consists of vertically stacked back-to-back diode structures. Here, we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths. However, the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems. With the increasing demand for multispectral information acquisition, infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention.
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